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      • Title:Two-inch Single-wafer W120 System
      • Introduction:

        Specification:

        1. Substrate: 1.25”, 2” (inch)

        2. Temperature Control Range: 300℃-1250℃

        3. Max Growth Rate: 3um/hour

        4. Pressure and Vacuum:

        Pressure
        <780mmHg
        Vacuum
        <2.0×10-2 (Torr)

        5. Thickness Non-uniformity: ±5%

            Component Non-uniformity: ±5%

        6. Gas Delivery Loops (can be customized to meet users’ needs):  

           4 Carrier Gases     
        H2, N2, NH3, SiH4
           6  MO  Sources      
        TEG, TEA, TMA, Cp2Mg, TMG, TMin

        7. Dimension (L×W×H): 5100×800×2200mm (not including the power supply of the RF device).


       

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